Physical and bonding characteristics of N-doped hydrogenated amorphous silicon carbide films grown by PECVD and annealed by pulsed electron beam

Effect of Post-Deposition Annealing On Hydrogenated Amorphous Silicon Thin Films Grown At High Power by Pecvd

The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in aSi:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vac...

Electron drift mobility measurements on annealed and light-soaked hydrogenated amorphous silicon

We measured the effects of light soaking on the electron drift mobility for three specimens of hydrogenated amorphous silicon (a-Si:H) from different laboratories. The temperature range 130-300 K was studied. The measurements in all cases reveal two temporal regimes: an early time regime associated with bandtail transport, and a later-time regime associated with deep trapping of the electrons. ...

PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications

Light-induced Defects in Thermal Annealed Hydrogenated Amorphous Silicon

The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable d...

Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2 /sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during dep...